Author Description

The proceedings of the Seventh symposium on ULSI Process Integration discusses all aspects of process integration. Covered areas include device technologies, 3D integration schemes, memory technologies, gate dielectrics, source-drain engineering, rapid thermal annealing, CMP issues, barrier materials and copper interconnects, multilevel integration structures, packaging concepts for TSV based technologies and SIPs, Ge and III-V technologies, novel memory elements, emerging devices, carbon naotubes, spintronics and polymer electronics.