Author Description

<p><b>Presents a landmark volume documenting 100 years of field-effect transistor innovation and applications</b></p> <p>The invention of the field-effect transistor (FET) in 1925 transformed the trajectory of modern civilization, enabling virtually every electronic device in existence today. From the earliest integrated circuits to the most advanced computers and smartphones, the FET has served as the indispensable foundation of contemporary information technology. <i>The FET Centennial: Celebrating the Field-Effect Transistor</i> commemorates this milestone by gathering a distinguished group of contributors to provide a comprehensive account of the device's history, global development, diverse applications, and potential future directions.</p> <p>This unique volume begins with an in-depth exploration of the history and evolution of FET technology, including the MOSFET's rise and international advances across the United States, Europe, and Asia. It then highlights critical applications and integration processes, ranging from memory and logic devices to CMOS image sensors, analog/RF CMOS, and emerging thin-film and wide-bandgap transistors. Finally, it addresses state-of-the-art developments, such as 3D and gate-all-around FETs, nanoscale transport phenomena, and the incorporation of novel 2D materials, while considering the possibility of what is next for the FET and what might come after.</p> <p>A singular resource that not only documents a century of achievements but also contextualizes the field-effect transistor's enduring importance and likely trajectory in the decades ahead, <i>The FET Centennial:</i></p> <ul> <li>Addresses both historical milestones and technological disruptions shaping current and future electronics</li> <li>Examines international research and development with narratives from the United States, Europe, and Asia</li> <li>Covers device structures from MOSFETs to III-V and 2D-material-based FETs</li> <li>Includes forward-looking analyses of na