
Volume is indexed by Thomson Reuters CPCI-S (WoS). The aim of this collection of peer-reviewed papers is to promote the open discussion of SiC hetero-epitaxy as related to the possibility of growing SiC on other materials and of growing various SiC polytypes so as to take advantage of the possibilities of band-gap engineering, These proceedings present the latest developments in Silicon Carbide, and the prospects for Gallium Nitride (GaN on Si, SiC, sapphire and free-standing) and Diamond power electronics. Finally, the progress made in Graphene technology, such as its introduction into devices and its relationship to SiC epitaxial material, is considered.
Page Count:
270
Publication Date:
2012-01-24
ISBN-10:
3038136719
ISBN-13:
9783038136712
No comments yet. Be the first to share your thoughts!