Author Description

Leading-edge metallization schemes inherently involve the introduction of novel metal systems and novel dielectric materials. Technological advances highlighted during AMC 2002 include the latest developments in integrating copper-based metallization with low-dielectric constant materials and in evaluating the reliability of such interconnects. For the second consecutive year, the volume takes a special look at the status of vertical integration, or 3D chips, and the promise it holds for high-density functional integration and heterogeneous integration. Technical leaders from around the world come together in this volume, the 18th in a popular series from the Materials Research Society, to offers a comprehensive overview of the current state of advanced metallization science and technologies. Topics include: advanced interconnects, 3D integration and packaging; CMP; reliability, test and characterization; metallization; integration; low-k/dielectric materials and characterization; atomic layer deposition (ALD) and barriers.