Author Description

Antimondie Related Materials And Devices -- Progress In Antimonide-based Mid-ir Lasers / G.w. Turner, M.j. Manfra, H.k. Choi, A.k. Goyal, S.c. Buchter, S.d. Calawa, A. Sanchez, D.l. Spears 3 -- Pseudopotential Methods For Superlattices: Applications To Mid-infrared Semiconductor Lasers / G.c. Dente, M.l. Tilton 11 -- Inn[subscript X]sb[subscript 1-x] Light Emitting Diodes Grown By Mbe / A.d. Johnson, R.h. Bennett, J. Newey, G.j. Pryce, G.m. Williams, T.m. Burke, J.c. Jones, A.m. Keir 23 -- Electronic Structure Engineering Of The Linewidth Enhancement Factor In Mid-infrared Semiconductor Laser Active Regions / Michael E. Flatte, J.t. Olesberg, T.f. Boggess 29 -- Recent Progress Of Mid-ir Type-ii Interband Cascade Lasers / Chih-hsiang Lin, W-y. Hwang, S.v. Zaitsev, J. Um, C.h. Kuo, A. Delaney, Jun Zheng, S.j. Murry, A. Liu, H.q. Le, Y. Mu, S.s. Pei 35 -- 2.3-2.7[mu]m Ingaassb/algaassb Broad-contact And Single-mode Ridge-waveguide Sch-qw Diode Lasers Operating In Cw Regime At Room Temperature / D. Garbuzov, H. Lee 41 -- Room Temperature Cw Operation Of Gainassb/algaassb Quantum Well Lasers Emitting In The 2.2 To 2.3[mu]m Wavelength Range / C. Mermelstein, S. Simanowski, M. Mayer, R. Kiefer, J. Schmitz, M. Walther, J. Wagner 53 -- Growth Of Insb On Gaas Substrates Using Inalsb Buffers For Magnetic Field Sensor Applications / R.m. Biefeld, J.d. Phillips 59 -- Compound Semiconductor Applications For Automotive Sensors / M.w. Pelczynski, J.j. Heremans, S. Schwed 65 -- Electrical Characterization Of Inas/(gain)sb Infrared Superlattice Photodiodes For The 8 To 12[mu]m Range / L. Burkle, F. Fuchs, R. Kiefer, W. Pletschen, R.e. Sah, J. Schmitz 77 -- Correlation Between Gainassb Surface Step Structure And Phase Separation / C.a. Wang 83 -- Advanced Gasb/ingaassb/algaassb 2-2.4[mu]m Photovoltaic Detectors / T.t. Piotrowski, A. Piotrowska, E. Kaminska, K. Golaszewska, E. Papis, M. Piskorski, W. Jung, J. Katcki, A. Kudla, J. Adamczewska, J. Piotrowski, Z. Nowak, Z. Orman, J. Pawlu