Author Description

These proceedings of the May 2008 symposium, held at the 213th meeting of The Electrochemical Society, Inc., includes materials from the six parallel half-day meetings and invited papers. Topics of the meetings (and representative papers) include Nitride Optical Emitters (improved InGaN LED efficiency using photonic crystal patterning and surface plasmon enhanced emission and enhanced thermal dissipation and light output of GaN/sapphire LEDs by direct Cu electroplating), wide bandgap materials (new nanorod-based sensors for chemical and biological applications), compound semiconductor growth and process technology (InAs quantum well transistors for high-speed low-power applications), Oxide material growth and characteristics (P-type doping and light emitting junction formation in zinc oxide), and oxide-based devices (self-organized and high aspect ration nanoporous zinc oxide prepared by anodization). Entries include contributions to the poster session and the editors include an author index.